TiO_2压敏电阻陶瓷元件等静压成型试验研究

采用干压及干压加等静压两种成型方法,通过对不同样品的电性能和焊接性能的比较,并通过SEM微观形貌的观察,研究了等静压成型对TiO2压敏电阻陶瓷元件的微观结构及电性能的影响。结果表明,经等静压成型的TiO2压敏电阻陶瓷的微观结构比较致密,气孔减少,元件的电压一致性和焊接性能得到较大的改善。     

Halogen-induced charge transfer polymerization of pyrrole in aqueous media

Simultaneous polymerization and doping of pyrrole have been carried out in the presence of a halogenic electron acceptor, bromine (Br₂) or iodine (I₂), in aqueous dispersion or in a two-phase solvent system. The morphology of the polypyrrole (PPY) so produced is granular and porous. The electrical conductivity of the PPY-I₂ charge transfer (CT) complex is of the order of 10¹ ohm⁻¹ cm⁻¹ while that of the PPY-Br₂ complex is about one order of magnitude less. Both complexes are stable in the atmosphere. The physicochemical properties of the PPY-I₂ and PPY-Br₂ CT complexes prepared under various experimental conditions are examined in detail.     

Growth,characterization and electrical anisotropy in GaTe—a natural semiconducting superlattice

GaTe is a III–VI semiconductor which has layered structure with large anisotropy in electrical properties. Growth of single crystals by the Bridgman technique permitted the measurement of thermoelectric power in orthogonal directions from which the anisotropy of hole effective masses were determined for the first time. From resistivity and Hall effect measurements the carrier activation energies and scattering mechanisms between 10–300°K were found. Study of the temperature dependence of conductivity revealed a variety of conduction mechanisms including weak localization below 20°K, hopping conduction between 20–50 K and band conduction in and across the layer planes atT>70 K. Weak localization was confirmed through observation of negative magnetoresistance. TheI–V characteristics showed quantized behaviour due to tunneling across potential barriers, which may be due to stacking faults between layer planes as observed by TEM studies.     

Resilient metal spring network silicone-matrix composite for separable interconnections

Resilient metal spring silicone-matrix conducting composites for separable interconnections in electronics were fabricated by the impregnation of silicone into a preform comprising randomly oriented C-shaped Cu-Be springs and a small proportion of Sn-Pb solder, which served to connect the springs at some of their intersections. Composites containing 6.1-9.8 vol.% total filler exhibited volume electrical resistivity 0.5-1.0 mΩ.cm and contact resistivity (with copper) 11-17 mΩ.cm². A compressive stress of about 30 kPa was needed for the low contact resistivity to be reached. The volume 17-26% and the contact resistivity increased by 5% after heating in air at 130-150°C for seven days. Composites containing <9 vol.% total filler showed no stress relaxation for seven days at 6.0% strain.     

Application of SiC-Si functionally gradient material to thermoelectric energy conversion device

Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 10⁸ times higher than that of a nongradient SiC ceramic.     

红外目标模拟器校准系统的研制与应用

采用标准辐射和红外目标模拟器的辐射交替折转进入红外光谱辐射计的方法，研制的红外目标模拟器校准系统可以对红外目标模拟器进行直接校准．该系统由标准准直辐射源，光束偏转装置和红外光谱辐射计组成．标准准直辐射源由工作温度为50℃～1050℃的标准黑体和口径300mm的离轴抛物面作主镜的准直光管组成．光束偏转装置由口径465mm的反射镜和定位精度5″的转台组成．红外光谱辐射计采用圆形渐变滤光片CVF对入射的辐射分光，3个光谱工作区间为1μm～3μm，3μm～5μm和8μm～14μm。3个区间的测试数据显示了最小可校准的光谱辐照度低于10^-11／cm^2，系统的相对标准不确定度为2％．     

高炉鼓风机电气控制技术改造

对高炉鼓风机事故原因分析发现，低电压保护动作、二次控制电源断电、电网电压突降是造成风机自动跳闸的主要原因。对风机电气控制技术进行改进，采取了去掉低电压跳闸保护、增设专用二次控制电源、设置瞬时断电延时自启动控制线路等措施，有效地避免了风机故障的发生，年减少经济损失66．13万元。     

(Cd,Co,Nb)掺杂的SnO2压敏材料的电学性质

研究了Cd对(Co，Nb)掺杂SnO2压敏材料电学性质的影响。组分为97．65％SnO2 O．75％Co2O3 0．10％Nb2O5 1．50％CdO的压敏电阻具有最大非线性系数(a=22．2)和最高的势垒(ψB=0．761eV)．当CdO的摩尔分数从0增加到3％时，(Co，Nb)掺杂SnO2压敏电阻的击穿电压从366V／mm增大到556V／mm，1kHz时的相对介电常数从1429减小到1108。晶界势垒高度测量揭示，SnO2的晶粒尺寸的减小是击穿电压增高和介电常数减小的主要原因。对Cd掺杂量增加引起SnO2晶粒减小的根源进行了解释。     

基于B点磁探针膛内电枢电弧长度与速度分布测量的计算机控制系统的研究

基于B点磁探针的测量原理，建立了电磁轨道炮膛内三维等离子体电枢电弧长度和电弧运动速度测量的数学模型，通过对该模型的分析给出了用于测量膛内电枢电弧长度和运动速度分布的相应推论。开发了用于测量膛内等离子体电枢电弧长度和速度的多通道计算机控制诊断系统，并进行了相应的试验研究。     

Electrical conductivity in iodine-doped ethyl cellulose

The electrical conductivity of solution-grown ethyl cellulose (EC) films, 5–30 μm thick, has been studied in the sandwich configuration (metal–EC–metal) as a function of iodine concentration from 0.5 to 5.0 wt% ratio. The studies were conducted in the temperature range 333–383 K, while the field was varied over the range (3.0–5.5) × 10⁴V/cm. Aluminium was used as the lower electrode, while the upper electrode was of Al, Ag, Cu, Au or Sn. Certain transient effects such as a large burst of current immediately after the application of field were observed. An attempt was made to identify the nature of the current by comparing the observed dependence on electric field, electrode material and temperature with the respective characteristic features of the existing theories of electrical conduction. The results show that the electrical conduction follows Ohm's law at lower fields, while at higher fields, space-charge limited current (SCLC) was observed. It was also found that Richardson–Schottky emission was responsible, to some extent, for the transport of charge carriers in the polymer. The conductivity of the films increased on doping with iodine. The dopant molecules are considered to act as additional trapping centes and provide links between the polymer molecules in the amorphous region, thus resulting in the formation of charge transfer complexes.